Static and dynamic parameters trade-off of Si p-n-junctions irradiated by fast electron under reverse bias at low temperature (77 K) - Zhdanovich, N. E.; Korshunov, Fedor Pavlovich; Marchenko, I. G. (Uniwersytet Marii Curie-Skłodowskiej (Lublin))
Keywords: silicon p-n-junctions; irradiation; fast electron